ON Semiconductor - FDG6306P

KEY Part #: K6522726

FDG6306P Pricing (USD) [594277PC Stock]

  • 1 pcs$0.06255
  • 3,000 pcs$0.06224

Nimewo Pati:
FDG6306P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2P-CH 20V 0.6A SC70-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDG6306P electronic components. FDG6306P can be shipped within 24 hours after order. If you have any demands for FDG6306P, Please submit a Request for Quotation here or send us an email:
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FDG6306P Atribi pwodwi yo

Nimewo Pati : FDG6306P
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2P-CH 20V 0.6A SC70-6
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 600mA
RD sou (Max) @ Id, Vgs : 420 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 114pF @ 10V
Pouvwa - Max : 300mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : SC-88 (SC-70-6)