APT41M80B2 Pricing (USD) [5955PC Stock]
- 1 pcs$7.64880
- 31 pcs$7.61075
- Nimewo Pati:
- APT41M80B2
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH 800V 43A T-MAX.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT41M80B2 electronic components. APT41M80B2 can be shipped within 24 hours after order. If you have any demands for APT41M80B2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT41M80B2 Atribi pwodwi yo
Nimewo Pati :
APT41M80B2
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH 800V 43A T-MAX
Seri :
POWER MOS 8™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
43A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
210 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
260nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
8070pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1040W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
T-MAX™ [B2]
Pake / Ka :
TO-247-3 Variant
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