GeneSiC Semiconductor - GA04JT17-247

KEY Part #: K6397545

GA04JT17-247 Pricing (USD) [2763PC Stock]

  • 1 pcs$14.78854
  • 10 pcs$13.67754
  • 25 pcs$12.56877
  • 100 pcs$11.68146
  • 250 pcs$10.72035

Nimewo Pati:
GA04JT17-247
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 1700V 4A TO-247AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA04JT17-247 electronic components. GA04JT17-247 can be shipped within 24 hours after order. If you have any demands for GA04JT17-247, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA04JT17-247 Atribi pwodwi yo

Nimewo Pati : GA04JT17-247
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 1700V 4A TO-247AB
Seri : -
Estati Pati : Active
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc) (95°C)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 480 mOhm @ 4A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 106W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AB
Pake / Ka : TO-247-3