[2597PC Stock]
- Nimewo Pati:
- IPD80R2K8CEBTMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 800V 1.9A TO252-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPD80R2K8CEBTMA1 electronic components. IPD80R2K8CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R2K8CEBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R2K8CEBTMA1 Atribi pwodwi yo
Nimewo Pati :
IPD80R2K8CEBTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 800V 1.9A TO252-3
Seri :
CoolMOS™
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.8 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 120µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
290pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
42W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252-3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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