RJP020N06T100 Pricing (USD) [257492PC Stock]
- 1 pcs$0.15880
- 1,000 pcs$0.15801
- Nimewo Pati:
- RJP020N06T100
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 60V 2A SOT-89.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RJP020N06T100 electronic components. RJP020N06T100 can be shipped within 24 hours after order. If you have any demands for RJP020N06T100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJP020N06T100 Atribi pwodwi yo
Nimewo Pati :
RJP020N06T100
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 60V 2A SOT-89
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
240 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 4V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
160pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
MPT3
Pake / Ka :
TO-243AA
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