IAUT300N10S5N015ATMA1 Pricing (USD) [21947PC Stock]
- 1 pcs$1.87788
- Nimewo Pati:
- IAUT300N10S5N015ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET75V120V.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IAUT300N10S5N015ATMA1 electronic components. IAUT300N10S5N015ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUT300N10S5N015ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUT300N10S5N015ATMA1 Atribi pwodwi yo
Nimewo Pati :
IAUT300N10S5N015ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET75V120V
Seri :
OptiMOS™-5
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
1.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 275µA
Chaje Gate (Qg) (Max) @ Vgs :
216nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
16011pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
375W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-HSOF-8-1
Pake / Ka :
8-PowerSFN
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