Nimewo Pati :
DMJ70H1D3SI3
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 700V 4.6A TO251
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.3 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
351pF @ 50V
Disipasyon Pouvwa (Max) :
41W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3 Stub Leads, IPak