[2913PC Stock]
- Nimewo Pati:
- SSM3J114TU(TE85L)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 20V 1.8A UFM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM3J114TU(TE85L) electronic components. SSM3J114TU(TE85L) can be shipped within 24 hours after order. If you have any demands for SSM3J114TU(TE85L), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J114TU(TE85L) Atribi pwodwi yo
Nimewo Pati :
SSM3J114TU(TE85L)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 20V 1.8A UFM
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4V
RD sou (Max) @ Id, Vgs :
149 mOhm @ 600mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
7.7nC @ 4V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
331pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
UFM
Pake / Ka :
3-SMD, Flat Leads
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