TSM060N03PQ33 RGG Pricing (USD) [491959PC Stock]
- 1 pcs$0.07518
- Nimewo Pati:
- TSM060N03PQ33 RGG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CH 30V 62A 8PDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM060N03PQ33 RGG electronic components. TSM060N03PQ33 RGG can be shipped within 24 hours after order. If you have any demands for TSM060N03PQ33 RGG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM060N03PQ33 RGG Atribi pwodwi yo
Nimewo Pati :
TSM060N03PQ33 RGG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CH 30V 62A 8PDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
62A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1342pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
40W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (3x3)
Pake / Ka :
8-PowerWDFN
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