Manifakti :
Alpha & Omega Semiconductor Inc.
Deskripsyon :
MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.6A, 8.1A
RD sou (Max) @ Id, Vgs :
20 mOhm @ 6.6A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
460pF @ 15V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-WDFN Exposed Pad
Pake Aparèy Founisè :
8-DFN-EP (3x3)