IXYS - IXTN60N50L2

KEY Part #: K6404114

IXTN60N50L2 Pricing (USD) [2499PC Stock]

  • 1 pcs$18.19379
  • 10 pcs$16.82937
  • 25 pcs$15.46477
  • 100 pcs$14.37309
  • 250 pcs$13.19050

Nimewo Pati:
IXTN60N50L2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 53A SOT-227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in IXYS IXTN60N50L2 electronic components. IXTN60N50L2 can be shipped within 24 hours after order. If you have any demands for IXTN60N50L2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTN60N50L2 Atribi pwodwi yo

Nimewo Pati : IXTN60N50L2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 53A SOT-227
Seri : Linear L2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 53A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 610nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 24000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 735W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC