Renesas Electronics America - NP90N055VUK-E1-AY

KEY Part #: K6404057

NP90N055VUK-E1-AY Pricing (USD) [2144PC Stock]

  • 1 pcs$0.88219

Nimewo Pati:
NP90N055VUK-E1-AY
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 55V 90A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Single, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NP90N055VUK-E1-AY Atribi pwodwi yo

Nimewo Pati : NP90N055VUK-E1-AY
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 55V 90A TO-220
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.85 mOhm @ 45A, 5V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 102nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.2W (Ta), 147W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63