IXYS - IXTD4N80P-3J

KEY Part #: K6400782

[3278PC Stock]


    Nimewo Pati:
    IXTD4N80P-3J
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 800.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Rèkteur - Single, Tiristors - SCR, Diodes - RF, Transistors - Objektif espesyal and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in IXYS IXTD4N80P-3J electronic components. IXTD4N80P-3J can be shipped within 24 hours after order. If you have any demands for IXTD4N80P-3J, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTD4N80P-3J Atribi pwodwi yo

    Nimewo Pati : IXTD4N80P-3J
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 800
    Seri : PolarHV™
    Estati Pati : Last Time Buy
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 800V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 3.4 Ohm @ 1.8A, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 100µA
    Chaje Gate (Qg) (Max) @ Vgs : 14.2nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 750pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 100W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : Die
    Pake / Ka : Die

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