Nimewo Pati :
IXTD4N80P-3J
Deskripsyon :
MOSFET N-CH 800
Estati Pati :
Last Time Buy
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.4 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
14.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
750pF @ 25V
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die