[3278PC Stock]
- Nimewo Pati:
- IXTD4N80P-3J
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Rèkteur - Single, Tiristors - SCR, Diodes - RF, Transistors - Objektif espesyal and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTD4N80P-3J electronic components. IXTD4N80P-3J can be shipped within 24 hours after order. If you have any demands for IXTD4N80P-3J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD4N80P-3J Atribi pwodwi yo
Nimewo Pati :
IXTD4N80P-3J
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800
Seri :
PolarHV™
Estati Pati :
Last Time Buy
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.4 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
14.2nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
750pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die
Pake / Ka :
Die
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