CSD85312Q3E Pricing (USD) [244691PC Stock]
- 1 pcs$0.15525
- 2,500 pcs$0.15448
- Nimewo Pati:
- CSD85312Q3E
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 39A 8VSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD85312Q3E electronic components. CSD85312Q3E can be shipped within 24 hours after order. If you have any demands for CSD85312Q3E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD85312Q3E Atribi pwodwi yo
Nimewo Pati :
CSD85312Q3E
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET 2N-CH 20V 39A 8VSON
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Source
Karakteristik FET :
Logic Level Gate, 5V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
39A
RD sou (Max) @ Id, Vgs :
12.4 mOhm @ 10A, 8V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
2390pF @ 10V
Pouvwa - Max :
2.5W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
8-VSON (3.3x3.3)
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