Vishay Siliconix - SIHW73N60E-GE3

KEY Part #: K6416141

SIHW73N60E-GE3 Pricing (USD) [12687PC Stock]

  • 1 pcs$3.24812
  • 500 pcs$3.06816

Nimewo Pati:
SIHW73N60E-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 600V 73A TO-247AD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Diodes - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHW73N60E-GE3 electronic components. SIHW73N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHW73N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHW73N60E-GE3 Atribi pwodwi yo

Nimewo Pati : SIHW73N60E-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 600V 73A TO-247AD
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 73A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 39 mOhm @ 36A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 362nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7700pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 520W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD
Pake / Ka : TO-247-3