VMO550-01F Pricing (USD) [570PC Stock]
- 1 pcs$85.86105
- 2 pcs$85.43388
- Nimewo Pati:
- VMO550-01F
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 590A Y3-DCB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - JFETs, Transistors - IGBTs - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in IXYS VMO550-01F electronic components. VMO550-01F can be shipped within 24 hours after order. If you have any demands for VMO550-01F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VMO550-01F Atribi pwodwi yo
Nimewo Pati :
VMO550-01F
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 590A Y3-DCB
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
590A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.1 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
6V @ 110mA
Chaje Gate (Qg) (Max) @ Vgs :
2000nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
50000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2200W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Y3-DCB
Pake / Ka :
Y3-DCB
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