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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT60N60BCSG

Microsemi Corporation - APT60N60BCSG

KEY Part #: K6398790

APT60N60BCSG Pricing (USD) [4345PC Stock]

  • 1 pcs$10.96631
  • 10 pcs$9.97022
  • 100 pcs$8.47468
Nimewo Pati:
APT60N60BCSG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 600V 60A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT60N60BCSG electronic components. APT60N60BCSG can be shipped within 24 hours after order. If you have any demands for APT60N60BCSG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT60N60BCSG Atribi pwodwi yo

Nimewo Pati : APT60N60BCSG
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 600V 60A TO-247
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 45 mOhm @ 44A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs : 190nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 7200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 431W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 [B]
Pake / Ka : TO-247-3

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