STW65N65DM2AG Pricing (USD) [9711PC Stock]
- 1 pcs$4.93143
- 10 pcs$4.43917
- 100 pcs$3.65010
- 500 pcs$3.05818
- Nimewo Pati:
- STW65N65DM2AG
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 650V 60A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STW65N65DM2AG electronic components. STW65N65DM2AG can be shipped within 24 hours after order. If you have any demands for STW65N65DM2AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW65N65DM2AG Atribi pwodwi yo
Nimewo Pati :
STW65N65DM2AG
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V 60A
Seri :
Automotive, AEC-Q101, MDmesh™ DM2
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
50 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
5500pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
446W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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