ON Semiconductor - FQB30N06LTM

KEY Part #: K6413054

FQB30N06LTM Pricing (USD) [120370PC Stock]

  • 1 pcs$0.30728
  • 800 pcs$0.29284

Nimewo Pati:
FQB30N06LTM
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 60V 32A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs and Transistors - Objektif espesyal ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQB30N06LTM Atribi pwodwi yo

Nimewo Pati : FQB30N06LTM
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 60V 32A D2PAK
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 32A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 35 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1040pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.75W (Ta), 79W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263AB)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB