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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. VN2222LL

ON Semiconductor - VN2222LL

KEY Part #: K6412968

[13262PC Stock]

    Nimewo Pati:
    VN2222LL
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 60V 150MA TO-92.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor VN2222LL electronic components. VN2222LL can be shipped within 24 hours after order. If you have any demands for VN2222LL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VN2222LL Atribi pwodwi yo

    Nimewo Pati : VN2222LL
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 60V 150MA TO-92
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 150mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 60pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 400mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-92-3
    Pake / Ka : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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