IRF7329PBF Pricing (USD) [4348PC Stock]
- 1 pcs$0.63551
- 10 pcs$0.56402
- 100 pcs$0.44574
- 500 pcs$0.32700
- 1,000 pcs$0.25816
- Nimewo Pati:
- IRF7329PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2P-CH 12V 9.2A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Zener - Single, Transistors - Objektif espesyal, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7329PBF electronic components. IRF7329PBF can be shipped within 24 hours after order. If you have any demands for IRF7329PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7329PBF Atribi pwodwi yo
Nimewo Pati :
IRF7329PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2P-CH 12V 9.2A 8-SOIC
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.2A
RD sou (Max) @ Id, Vgs :
17 mOhm @ 9.2A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
57nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
3450pF @ 10V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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