Nimewo Pati :
IPW60R105CFD7XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
HIGH POWERNEW
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
105 mOhm @ 9.3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 470µA
Chaje Gate (Qg) (Max) @ Vgs :
42nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1752pF @ 400V
Disipasyon Pouvwa (Max) :
106W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO247-3-41