[1222PC Stock]
- Nimewo Pati:
- HAT1072H-EL-E
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET P-CH 30V 40A LFPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America HAT1072H-EL-E electronic components. HAT1072H-EL-E can be shipped within 24 hours after order. If you have any demands for HAT1072H-EL-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HAT1072H-EL-E Atribi pwodwi yo
Nimewo Pati :
HAT1072H-EL-E
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET P-CH 30V 40A LFPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
+10V, -20V
Antre kapasite (Ciss) (Max) @ Vds :
9500pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
30W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK
Pake / Ka :
SC-100, SOT-669
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