STMicroelectronics - STGB10NB37LZT4

KEY Part #: K6421859

STGB10NB37LZT4 Pricing (USD) [68250PC Stock]

  • 1 pcs$0.57577
  • 1,000 pcs$0.57290

Nimewo Pati:
STGB10NB37LZT4
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 440V 20A 125W D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGB10NB37LZT4 electronic components. STGB10NB37LZT4 can be shipped within 24 hours after order. If you have any demands for STGB10NB37LZT4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGB10NB37LZT4 Atribi pwodwi yo

Nimewo Pati : STGB10NB37LZT4
Manifakti : STMicroelectronics
Deskripsyon : IGBT 440V 20A 125W D2PAK
Seri : PowerMESH™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 440V
Kouran - Pèseptè (Ic) (Max) : 20A
Kouran - Pèseptè batman (Icm) : 40A
Vce (sou) (Max) @ Vge, Ic : 1.8V @ 4.5V, 10A
Pouvwa - Max : 125W
Oblije chanje enèji : 2.4mJ (on), 5mJ (off)
Kalite Antre : Standard
Gate chaje : 28nC
Td (on / off) @ 25 ° C : 1.3µs/8µs
Kondisyon egzamen an : 328V, 10A, 1 kOhm, 5V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -65°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK