PMPB95ENEA/FX Pricing (USD) [489742PC Stock]
- 1 pcs$0.07590
- 3,000 pcs$0.07552
- Nimewo Pati:
- PMPB95ENEA/FX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 80V 4.1A 6DFN2020MD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMPB95ENEA/FX electronic components. PMPB95ENEA/FX can be shipped within 24 hours after order. If you have any demands for PMPB95ENEA/FX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB95ENEA/FX Atribi pwodwi yo
Nimewo Pati :
PMPB95ENEA/FX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 80V 4.1A 6DFN2020MD
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
105 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14.9nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
504pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-DFN2020MD (2x2)
Pake / Ka :
6-UDFN Exposed Pad
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