DMG2302UQ-7 Pricing (USD) [14058PC Stock]
- 3,000 pcs$0.06245
- Nimewo Pati:
- DMG2302UQ-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 4.2A SOT23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG2302UQ-7 electronic components. DMG2302UQ-7 can be shipped within 24 hours after order. If you have any demands for DMG2302UQ-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG2302UQ-7 Atribi pwodwi yo
Nimewo Pati :
DMG2302UQ-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 4.2A SOT23
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
90 mOhm @ 3.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
594.3pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
800mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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