Nimewo Pati :
MCB40P1200LB
Deskripsyon :
POWER MOSFET
FET Kalite :
2 N-Channel (Dual) Common Source
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
58A
RD sou (Max) @ Id, Vgs :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
9-SMD Power Module
Pake Aparèy Founisè :
SMPD