Diodes Incorporated - DMN1029UFDB-7

KEY Part #: K6523067

DMN1029UFDB-7 Pricing (USD) [618813PC Stock]

  • 1 pcs$0.05977
  • 3,000 pcs$0.05384

Nimewo Pati:
DMN1029UFDB-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 12V 5.6A 6UDFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Transistors - JFETs, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - RF and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN1029UFDB-7 electronic components. DMN1029UFDB-7 can be shipped within 24 hours after order. If you have any demands for DMN1029UFDB-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN1029UFDB-7 Atribi pwodwi yo

Nimewo Pati : DMN1029UFDB-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 12V 5.6A 6UDFN
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.6A
RD sou (Max) @ Id, Vgs : 29 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 19.6nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 914pF @ 6V
Pouvwa - Max : 1.4W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-UDFN Exposed Pad
Pake Aparèy Founisè : U-DFN2020-6 (Type B)

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