Vishay Siliconix - SISA88DN-T1-GE3

KEY Part #: K6396187

SISA88DN-T1-GE3 Pricing (USD) [450531PC Stock]

  • 1 pcs$0.08210

Nimewo Pati:
SISA88DN-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 30V 1212-8 PPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - RF, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISA88DN-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SISA88DN-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 1212-8 PPAK
Seri : TrenchFET® Gen IV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16.2A (Ta), 40.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 6.7 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 25.5nC @ 10V
Vgs (Max) : +20V, -16V
Antre kapasite (Ciss) (Max) @ Vds : 985pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.2W (Ta), 19.8W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® 1212-8
Pake / Ka : PowerPAK® 1212-8