Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 650V 100A TO-3PN
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
100A
Kouran - Pèseptè batman (Icm) :
150A
Vce (sou) (Max) @ Vge, Ic :
2.2V @ 15V, 50A
Oblije chanje enèji :
1.35mJ (on), 309µJ (off)
Td (on / off) @ 25 ° C :
20.8ns/62.4ns
Kondisyon egzamen an :
400V, 50A, 6 Ohm, 15V
Ranvèse Tan Reverse (trr) :
31.8ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3, SC-65-3
Pake Aparèy Founisè :
TO-3PN