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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. SI2312-TP

Micro Commercial Co - SI2312-TP

KEY Part #: K6394393

SI2312-TP Pricing (USD) [1230545PC Stock]

  • 1 pcs$0.03323
  • 3,000 pcs$0.03306
Nimewo Pati:
SI2312-TP
Manifakti:
Micro Commercial Co
Detaye deskripsyon:
N-CHANNEL MOSFET SOT-23 PACKAGE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Micro Commercial Co SI2312-TP electronic components. SI2312-TP can be shipped within 24 hours after order. If you have any demands for SI2312-TP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2312-TP Atribi pwodwi yo

Nimewo Pati : SI2312-TP
Manifakti : Micro Commercial Co
Deskripsyon : N-CHANNEL MOSFET SOT-23 PACKAGE
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V
RD sou (Max) @ Id, Vgs : 41 mOhm @ 4.3A, 1.8V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 865pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 350mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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