IXTH6N80A Pricing (USD) [10759PC Stock]
- 1 pcs$4.42712
- 30 pcs$4.40509
- Nimewo Pati:
- IXTH6N80A
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800V 6A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Diodes - Rèkteur - Single, Diodes - RF and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH6N80A electronic components. IXTH6N80A can be shipped within 24 hours after order. If you have any demands for IXTH6N80A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH6N80A Atribi pwodwi yo
Nimewo Pati :
IXTH6N80A
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800V 6A TO-247
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
180W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 (IXTH)
Pake / Ka :
TO-247-3
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