2N7002DWH6327XTSA1 Pricing (USD) [1203931PC Stock]
- 1 pcs$0.03072
- 3,000 pcs$0.02281
- Nimewo Pati:
- 2N7002DWH6327XTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 0.3A SOT363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies 2N7002DWH6327XTSA1 electronic components. 2N7002DWH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for 2N7002DWH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N7002DWH6327XTSA1 Atribi pwodwi yo
Nimewo Pati :
2N7002DWH6327XTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 60V 0.3A SOT363
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA
RD sou (Max) @ Id, Vgs :
3 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.6nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
20pF @ 25V
Pouvwa - Max :
500mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-VSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
PG-SOT363-6
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