IXYS - IXFX140N25T

KEY Part #: K6394639

IXFX140N25T Pricing (USD) [9959PC Stock]

  • 1 pcs$4.78218
  • 30 pcs$4.75838

Nimewo Pati:
IXFX140N25T
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 250V 140A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Diodes - Zener - Single, Diodes - Rèkteur - Single and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in IXYS IXFX140N25T electronic components. IXFX140N25T can be shipped within 24 hours after order. If you have any demands for IXFX140N25T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX140N25T Atribi pwodwi yo

Nimewo Pati : IXFX140N25T
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 250V 140A PLUS247
Seri : GigaMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 140A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 17 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 255nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 19000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 960W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3