[8038PC Stock]
- Nimewo Pati:
- IXGT30N60B2D1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 600V 70A 190W TO268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXGT30N60B2D1 electronic components. IXGT30N60B2D1 can be shipped within 24 hours after order. If you have any demands for IXGT30N60B2D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGT30N60B2D1 Atribi pwodwi yo
Nimewo Pati :
IXGT30N60B2D1
Manifakti :
IXYS
Deskripsyon :
IGBT 600V 70A 190W TO268
Seri :
HiPerFAST™
Estati Pati :
Obsolete
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
70A
Kouran - Pèseptè batman (Icm) :
150A
Vce (sou) (Max) @ Vge, Ic :
1.8V @ 15V, 24A
Pouvwa - Max :
190W
Oblije chanje enèji :
320µJ (off)
Kalite Antre :
Standard
Gate chaje :
66nC
Td (on / off) @ 25 ° C :
13ns/110ns
Kondisyon egzamen an :
400V, 24A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
25ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè :
TO-268
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