[2600PC Stock]
- Nimewo Pati:
- VS-FB180SA10P
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- MOSFET N-CH 100V 180A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-FB180SA10P electronic components. VS-FB180SA10P can be shipped within 24 hours after order. If you have any demands for VS-FB180SA10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-FB180SA10P Atribi pwodwi yo
Nimewo Pati :
VS-FB180SA10P
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
MOSFET N-CH 100V 180A SOT-227
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.5 mOhm @ 180A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
380nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10700pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
480W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227
Pake / Ka :
SOT-227-4, miniBLOC
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