Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET NP 20V 2.5A 8-SOIC
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A, 2.5A
RD sou (Max) @ Id, Vgs :
125 mOhm @ 1A, 10V
Chaje Gate (Qg) (Max) @ Vgs :
27nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
525pF @ 10V
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC