Infineon Technologies - BSP296NH6433XTMA1

KEY Part #: K6420874

BSP296NH6433XTMA1 Pricing (USD) [275923PC Stock]

  • 1 pcs$0.13405
  • 4,000 pcs$0.11267

Nimewo Pati:
BSP296NH6433XTMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 1.1A SOT-223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Diodes - RF, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies BSP296NH6433XTMA1 electronic components. BSP296NH6433XTMA1 can be shipped within 24 hours after order. If you have any demands for BSP296NH6433XTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP296NH6433XTMA1 Atribi pwodwi yo

Nimewo Pati : BSP296NH6433XTMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 1.1A SOT-223
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 600 mOhm @ 1.2A, 10V
Vgs (th) (Max) @ Id : 1.8V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 6.7nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 152.7pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.8W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-SOT223-4
Pake / Ka : TO-261-4, TO-261AA