Nimewo Pati :
FDFMA2P029Z
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 3.1A 2X2MLP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
95 mOhm @ 3.1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
720pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.4W (Tj)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-MicroFET (2x2)
Pake / Ka :
6-VDFN Exposed Pad