BSM180D12P2C101 Pricing (USD) [224PC Stock]
- 1 pcs$216.26708
- 10 pcs$208.25769
- Nimewo Pati:
- BSM180D12P2C101
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET 2N-CH 1200V 180A MODULE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - TRIACs and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor BSM180D12P2C101 electronic components. BSM180D12P2C101 can be shipped within 24 hours after order. If you have any demands for BSM180D12P2C101, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM180D12P2C101 Atribi pwodwi yo
Nimewo Pati :
BSM180D12P2C101
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2N-CH 1200V 180A MODULE
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
204A (Tc)
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
23000pF @ 10V
Pouvwa - Max :
1130W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
-
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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