STMicroelectronics - STU1HN60K3

KEY Part #: K6401825

STU1HN60K3 Pricing (USD) [77933PC Stock]

  • 1 pcs$0.47663
  • 10 pcs$0.42354
  • 100 pcs$0.31656
  • 500 pcs$0.24550
  • 1,000 pcs$0.19381

Nimewo Pati:
STU1HN60K3
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 600V 1.2A IPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in STMicroelectronics STU1HN60K3 electronic components. STU1HN60K3 can be shipped within 24 hours after order. If you have any demands for STU1HN60K3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STU1HN60K3 Atribi pwodwi yo

Nimewo Pati : STU1HN60K3
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 600V 1.2A IPAK
Seri : SuperMESH3™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 8 Ohm @ 600mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 9.5nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 27W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I-PAK
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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