Nimewo Pati :
SPP11N60S5HKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V 11A TO-220AB
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
380 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
54nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1460pF @ 25V
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3-1