EPC2100ENGRT Pricing (USD) [19847PC Stock]
- 1 pcs$2.29566
- 500 pcs$2.28424
- Nimewo Pati:
- EPC2100ENGRT
- Manifakti:
- EPC
- Detaye deskripsyon:
- GANFET 2 N-CH 30V 9.5A/38A DIE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in EPC EPC2100ENGRT electronic components. EPC2100ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2100ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2100ENGRT Atribi pwodwi yo
Nimewo Pati :
EPC2100ENGRT
Manifakti :
EPC
Deskripsyon :
GANFET 2 N-CH 30V 9.5A/38A DIE
Seri :
eGaN®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta), 40A (Ta)
RD sou (Max) @ Id, Vgs :
8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 4mA, 2.5V @ 16mA
Chaje Gate (Qg) (Max) @ Vgs :
4.9nC @ 15V, 19nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds :
475pF @ 15V, 1960pF @ 15V
Pouvwa - Max :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
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