IXYS - IXFN94N50P2

KEY Part #: K6393320

IXFN94N50P2 Pricing (USD) [4517PC Stock]

  • 1 pcs$10.54934
  • 10 pcs$9.75802
  • 100 pcs$8.33398

Nimewo Pati:
IXFN94N50P2
Manifakti:
IXYS
Detaye deskripsyon:
500V POLAR2 HIPERFETS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Tiristors - SCR, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in IXYS IXFN94N50P2 electronic components. IXFN94N50P2 can be shipped within 24 hours after order. If you have any demands for IXFN94N50P2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN94N50P2 Atribi pwodwi yo

Nimewo Pati : IXFN94N50P2
Manifakti : IXYS
Deskripsyon : 500V POLAR2 HIPERFETS
Seri : HiPerFET™, PolarP2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 68A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 55 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 220nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 13700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 780W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC