Toshiba Semiconductor and Storage - TPH5R906NH,L1Q

KEY Part #: K6409577

TPH5R906NH,L1Q Pricing (USD) [132278PC Stock]

  • 1 pcs$0.28704
  • 5,000 pcs$0.28561

Nimewo Pati:
TPH5R906NH,L1Q
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N CH 60V 28A 8-SOP ADV.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPH5R906NH,L1Q electronic components. TPH5R906NH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH5R906NH,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH5R906NH,L1Q Atribi pwodwi yo

Nimewo Pati : TPH5R906NH,L1Q
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 60V 28A 8-SOP ADV
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 28A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 5.9 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id : 4V @ 300µA
Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3100pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.6W (Ta), 57W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOP Advance (5x5)
Pake / Ka : 8-PowerVDFN