Texas Instruments - CSD17570Q5B

KEY Part #: K6415770

CSD17570Q5B Pricing (USD) [92011PC Stock]

  • 1 pcs$0.42708
  • 2,500 pcs$0.42496

Nimewo Pati:
CSD17570Q5B
Manifakti:
Texas Instruments
Detaye deskripsyon:
MOSFET N-CH 30V 100A 8VSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - IGBTs - Modil yo and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
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ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CSD17570Q5B Atribi pwodwi yo

Nimewo Pati : CSD17570Q5B
Manifakti : Texas Instruments
Deskripsyon : MOSFET N-CH 30V 100A 8VSON
Seri : NexFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 0.69 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 1.9V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 121nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 13600pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-VSON-CLIP (5x6)
Pake / Ka : 8-PowerTDFN