Infineon Technologies - IRFR3410PBF

KEY Part #: K6411935

IRFR3410PBF Pricing (USD) [13619PC Stock]

  • 1 pcs$0.53935
  • 10 pcs$0.47622
  • 100 pcs$0.37625
  • 500 pcs$0.27600
  • 1,000 pcs$0.21790

Nimewo Pati:
IRFR3410PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 31A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFR3410PBF electronic components. IRFR3410PBF can be shipped within 24 hours after order. If you have any demands for IRFR3410PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR3410PBF Atribi pwodwi yo

Nimewo Pati : IRFR3410PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 31A DPAK
Seri : HEXFET®
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 31A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 39 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1690pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3W (Ta), 110W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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