IXFH20N85X Pricing (USD) [13455PC Stock]
- 1 pcs$3.95308
- 10 pcs$3.55601
- 100 pcs$2.92365
- 500 pcs$2.44954
- 1,000 pcs$2.13347
- Nimewo Pati:
- IXFH20N85X
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 850V/20A ULTRA JUNCTION X-CLASS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH20N85X electronic components. IXFH20N85X can be shipped within 24 hours after order. If you have any demands for IXFH20N85X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH20N85X Atribi pwodwi yo
Nimewo Pati :
IXFH20N85X
Manifakti :
IXYS
Deskripsyon :
850V/20A ULTRA JUNCTION X-CLASS
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
850V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
330 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1660pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
540W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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