IXTU02N50D Pricing (USD) [33250PC Stock]
- 1 pcs$1.37022
- 75 pcs$1.36341
- Nimewo Pati:
- IXTU02N50D
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 500V 0.2A TO-251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Tiristors - TRIACs and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in IXYS IXTU02N50D electronic components. IXTU02N50D can be shipped within 24 hours after order. If you have any demands for IXTU02N50D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTU02N50D Atribi pwodwi yo
Nimewo Pati :
IXTU02N50D
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 500V 0.2A TO-251
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
30 Ohm @ 50mA, 0V
Vgs (th) (Max) @ Id :
5V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
120pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
1.1W (Ta), 25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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