Manifakti :
Alpha & Omega Semiconductor Inc.
Deskripsyon :
MOSFET 2N-CH 30V 11.5A/17A 8DFN
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.5A, 17A
RD sou (Max) @ Id, Vgs :
8.9 mOhm @ 11.5A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1110pF @ 15V
Pouvwa - Max :
1.9W, 2.1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-DFN (5x6)